copyright@ semipower electronic technology co., ltd. all rights reserved. jun. 2017. rev. 5.0 1 /7 SW7N65D n - channel enhanced mode to - 220/to - 251/to - 251n/to - 252/to - 220f mosfet absolute maximum ratings symbol parameter value unit to - 220 to - 251 to - 251n to - 252 to - 220f v dss drain to source voltage 650 v i d continuous drain current (@t c =25 o c) 7* a continuous drain current (@t c =100 o c) 4.4* a i dm drain current pulsed (note 1) 28 a v gs gate to source voltage 30 v e as single pulsed avalanche energy (note 2) 430 mj e ar repetitive avalanche energy (note 1) 40 mj dv/dt peak diode recovery dv / dt (note 3) 5 v/ns p d total power dissipation (@t c =25 o c) 208.3 173.6 27.8 w derating factor above 25 o c 1.67 1.39 0.22 w/ o c t stg , t j operating junction temperature & storage temperature - 55 ~ + 150 o c t l maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds. 300 o c thermal characteristics symbol parameter value unit to - 220 to - 251 to - 251n to - 252 to - 220f r thjc thermal resistance, junction to case 0.6 0.72 4.5 o c/w r thja thermal resistance, junction to ambient 60 82 50 o c /w *. drain current is limited by junction temperature. bv dss : 650v i d : 7a r ds(on) : 1.1? 1 2 3 order codes item sales type marking package packaging 1 sw p 7n65d SW7N65D to - 220 tube 2 sw i 7n65d SW7N65D to - 251 tube 3 sw n 7n65d SW7N65D to - 251n tube 4 sw d 7n65d SW7N65D to - 252 reel 5 sw f 7n65d SW7N65D to - 220f tube 1. gate 2. drain 3. source to - 220 to - 251 to - 252 to - 220f features ? high ruggedness ? low r ds( on ) (t yp 1.1 ? )@v gs =10v ? low gate charge ( typ 30nc) ? improved dv/dt capability ? 100% avalanche tested ? application: charge,led, pc power general description this power mosfet is produced with advanced technology of samwin. this technology enable the power mosfet to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. 1 2 3 1 2 3 1 2 3 1 2 3 1 2 3 to - 251n
copyright@ semipower electronic technology co., ltd. all rights reserved. jun. 2017. rev. 5.0 2 /7 SW7N65D electrical characteristic ( t c = 25 o c unless otherwise specified ) symbol parameter test conditions min. typ. max. unit off characteristics bv dss drain to source breakdown voltage v gs =0v, i d =250ua 650 v bv dss / t j breakdown voltage temperature coefficient i d =250ua, referenced to 25 o c 0.51 v/ o c i dss drain to source leakage current v ds =650v, v gs =0v 1 ua v ds =520v, t c =125 o c 50 ua i gss gate to source leakage current, forward v gs =30v, v ds =0v 100 na gate to source leakage current, reverse v gs = - 30v, v ds =0v - 100 na on characteristics v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2.5 4.5 v r ds(on) drain to source on state resistance v gs =10v, i d = 3.5a 1.1 1.4 ? g fs forward transconductance v ds =30 v, i d =3.5a 6.3 s dynamic characteristics c iss input capacitance v gs =0v, v ds =25v, f=1mhz 950 pf c oss output capacitance 108 c rss reverse transfer capacitance 16 t d(on) turn on delay time v ds =350v, i d =7a, r g =25? (note 4,5) 16 ns t r rising time 36 t d(off) turn off delay time 83 t f fall time 40 q g total gate charge v ds =520v, v gs =10v, i d =7a (note 4,5) 30 nc q gs gate - source charge 5 q gd gate - drain charge 15 r g gate resistance v ds =0v, scan f mode 1.7 ? source to drain diode ratings characteristics symbol parameter test conditions min. typ. max. unit i s continuous source current integral reverse p - n junction diode in the mosfet 7 a i sm pulsed source current 28 a v sd diode forward voltage drop. i s =7a, v gs =0v 1.4 v t rr reverse recovery time i s =7a, v gs =0v, di f / dt =100a/us 436 ns q rr reverse recovery c harge 8.7 uc . notes 1. repeatitive rating : pulse width limited by junction temperature. 2. l = 17.5mh, i as = 7a, v dd = 50v, r g =25?, starting t j = 25 o c 3. i sd 7a, di/dt = 100a/us, v dd bv dss , staring t j =25 o c 4. pulse test : pulse width 300us, duty cycle 2%. 5. essentially independent of operating temperature.
copyright@ semipower electronic technology co., ltd. all rights reserved. jun. 2017. rev. 5.0 3 /7 SW7N65D fig. 1. on - state characteristics fig. 3. on - resistance variation vs. drain current and gate voltage fig. 4. on - state current vs. diode forward voltage fig 5. breakdown voltage variation vs. junction temperature fig. 6. on resistance variation vs. junction temperature fig. 2. transfer characteristics
copyright@ semipower electronic technology co., ltd. all rights reserved. jun. 2017. rev. 5.0 4 /7 SW7N65D fig. 9 . maximum safe operating area(to - 220) fig. 10. maximum safe operating area (to - 251/to - 251n/to - 252) fig. 11. maximum safe operating area(to - 220f) fig. 8. c apacitance characteristics fig. 7. gate charge characteristics
copyright@ semipower electronic technology co., ltd. all rights reserved. jun. 2017. rev. 5.0 5 /7 SW7N65D fig. 13. transient thermal response curve (to - 251/to - 251n/to - 252) fig. 12. transient thermal response curve(to - 220) fig. 14. transient thermal response curve(to - 220f)
copyright@ semipower electronic technology co., ltd. all rights reserved. jun. 2017. rev. 5.0 6 /7 SW7N65D v dd dut v ds r l r gs 10v in 10% v ds v in 90% 10% t d(on) t r t on t d(off) t off t f fig. 16 . switching time test circuit & waveform fig. 15. gate charge test circuit & waveform fig. 17 . unclamped inductive switching test circuit & waveform
copyright@ semipower electronic technology co., ltd. all rights reserved. jun. 2017. rev. 5.0 7 /7 SW7N65D disclaimer * all the data & curve in this document was tested in xian semipower testing & application cente r. * this product has passed the pct,tc,htrb,htgb,hast,pc and solderdunk reliability testing. * qualification standards can also be found on the web site ( http://www.semipower.com.cn ) * suggestions for improvement are appreciated, please send your suggestions to samwin@samwinsemi.com fig. 18 . peak diode recovery dv/dt test circuit & waveform v dd same type as dut v ds l r g 10v gs i s + - v ds dut *. dv/dt controlled by rg *. is controlled by pulse period v gs (driver) i s (dut) v ds (dut) body diode forward voltage drop v f diode recovery dv/dt i rm di/dt 10v diode reverse current v dd
|
